1 AM4409P analog power november, 2003 - rev. a preliminary publication order number: ds-am4409_f these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. v ds (v) r ds ( on ) m( ? )i d (a) 20 @ v gs = -4.5v 10.2 29 @ v gs = -2.5v 8.5 54 @ v gs = -1.8v 6.2 product summary -20 p-channel 20-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature so-8 surface mount package saves board space ? high power and current handling capability notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 45 6 7 8 symbol maximum units v ds -20 v gs 12 t a =25 o c 10.2 t a =70 o c8.2 i dm 30 i s -2.3 a t a =25 o c3.1 t a =70 o c2 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units t <= 10 sec 50 o c/w steady state 92 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja
2 AM4409P analog power november, 2003 - rev. a preliminary publication order number: ds-am4409_f notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -350 ua -0.7 gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d ( on ) v ds = -5 v, v gs = -4.5 v -20 a v gs = -4.5 v, i d = -10.2 a 20 v gs = -2.5 v, i d = -8.5 a 29 v gs = -1.8 v, i d = -6.2 a 54 forward tranconductance a g fs v ds = -10 v, i d = -10.2 a 36 s diode forward voltage v sd i s = -2.3 a, v gs = 0 v -0.8 v total gate charge q g 30 gate-source charge q g s 4 gate-drain charge q gd 6 turn-on delay time t d(on) 25 rise time t r 45 turn-off delay time t d(off) 150 fall-time t f 70 m ? parameter limits unit v dd = -10 v, r l = 15 ? , i d = -1 a, v gen = -5 v, r g = 6 ? ns v ds = -10 v, v gs = -5 v, i d = -10.2 a nc dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on)
3 AM4409P analog power november, 2003 - rev. a preliminary publication order number: ds-am4409_f typical electrical characteristics figure 1. output characteristics figure 2. transfer characteristics figure 6. on-resistance vs. junction temperature figure 5. gate charge figure 4. capacitance figure 3. on resistance vs. drain current 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 3.5 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -2.5v -2.0v -1.5v -3.0v 0 10 20 30 40 50 0.511.522.53 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 1020304050 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = - 2.0v -4.5v -2.5v 0 800 1600 2400 3200 4000 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -10.2a v gs = - 4.5v 0 1 2 3 4 5 0 6 12 18 24 30 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -8a v ds = -10v -15v
4 AM4409P analog power november, 2003 - rev. a preliminary publication order number: ds-am4409_f typical electrical characteristics figure 11. normalized thermal transi ent impedance, junction-to-ambient figure 10. single pulse power, junction-to-ambient figure 9. safe operating area figure 7. source-drain diode forward voltage figu re 8. on-resistance vs. gate-to-source voltage 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -5a. 25d 0.005 0.015 0.025 0.035 0.045 0.055 12345 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = - t a = 25 o c 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms 100 ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) + r ja r ja = 125 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
5 AM4409P analog power november, 2003 - rev. a preliminary publication order number: ds-am4409_f package information so-8: 8lead h x 45
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